
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
IRG7T75HF12AIn Stock
Real-time quotes
Infineon Technologies
APTGF50DDA120T3GIn Stock
Real-time quotes
Microsemi Corporation
IRG7T50HF12AIn Stock
Real-time quotes
Infineon Technologies
IRG7T300CL12BIn Stock
Real-time quotes
Infineon Technologies

VS-ETF150Y65UIn Stock
Real-time quotes
Vishay General Semiconductor - Diodes Division
IRG7U200HF12BIn Stock
Real-time quotes
Infineon Technologies
IRG7U150HF12BIn Stock
Real-time quotes
Infineon Technologies
IRG7T150HF12BIn Stock
Real-time quotes
Infineon Technologies
IRG7T200HF12BIn Stock
Real-time quotes
Infineon Technologies

VS-GB75NA60UFIn Stock
Real-time quotes
Vishay General Semiconductor - Diodes Division

VS-GT105NA120UXIn Stock
Real-time quotes
Vishay General Semiconductor - Diodes Division

FPF2G120BF07ASIn Stock
Real-time quotes
onsemi
CM200EXS-24SIn Stock
Real-time quotes
Powerex Inc.
IRG7U75HF12AIn Stock
Real-time quotes
Infineon Technologies
VS-GP400TD60SIn Stock
Real-time quotes
Vishay General Semiconductor - Diodes Division

VS-GB55NA120UXIn Stock
Real-time quotes
Vishay General Semiconductor - Diodes Division

VS-GB55LA120UXIn Stock
Real-time quotes
Vishay General Semiconductor - Diodes Division
FPF1C2P5MF07AMIn Stock
Real-time quotes
onsemi

VS-GB75LA60UFIn Stock
Real-time quotes
Vishay General Semiconductor - Diodes Division
FPF2C8P2NL07AIn Stock
Real-time quotes
onsemi
Subscribe to receive our offers